852 nm Laser Diode | PH852DBR Series

PH852DBR Series High-Power Single-Frequency Laser Diode

852 nm Laser Diode

  

Technology

  • DBR Single-Frequency Laser Chip
  • AlGaAs QW Active Layer
  • Epi designed for high reliability

 Features

  • Available in several package styles
  • Pulsed operation for spectral stability at short pulse lengths
  • High power for CW applications
  • High Slope Efficiency

Description

The PH852DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam.
Facets are passivated for high-power reliability. 852 nm laser diodes are used in atomic
spectroscopy for cesium based applications.

 

 

 

 

Absolute Maximum Rating

Parameter

Symbol

Unit

Min

Max

Storage Temperature

TSTG

°C

0

80

Operating  Temperature

TOP

°C

5.0

70

CW Laser Forward Current, T=Top

IF

mA

-

200**

Pulsed Laser Forward Current, T=25°C,

IF

A

-

0.5

PW=300 ns, DC=10%

Laser Reverse Voltage

VR

V

-

0.0

Photodiode Forward Current 1/2/

IP

mA

-

5.0

Photodiode Reverse Voltage 1/2/

VR

V

-

20.0

Photodiode Dark Current, VR=10V, LD IF=0, 1/2/

ID

nA

-

50

TEC Current 1/2/

ITEC

A

-2.5

2.5

TEC Voltage 1/2/

VTEC

V

-6.0

6.0

Thermistor Current 1/2/

ITHRM

mA

-

1.0

Thermistor Voltage 1/2/

VTHRM

V

-

10

ESD (HBM)

-

V

-

500

External Back Reflection

-

dB

-

-14

Lead Soldering Temperature, 10 sec. Max., 1/2/

-

°C

-

260

Fiber Pull Force 1/

-

N

-

5.0

Fiber Bend Radius 1/

-

mm

-

35

1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC = 25°C unless otherwise specified

Parameter

Symbol

Unit

Min

Typ

Max

Center Wavelength

λc

nm

850

852

854

Optical Output Power @ LIV current

Po

mW

See Power Options Call-out

Slope Efficiency, 1/

ηd

W/A

0.3

0.36

 

Slope Efficiency

ηd

W/A

0.6

0.72

-

Threshold Current

Ith

mA

-

40

50

Laser Series Resistance

RS

Ω

-

2.5

3.5

Laser Forward Voltage

VF

V

-

2.0

2.5

Thermistor Resistance @ 25°C, 1/2/

RT

-

10

-

Photodiode Dark Current, VR=10V, LD IF=0,1/2/

ID

nA

-

-

50

Laser Line Width

∆v

MHz

-

0.5

1.0

Beam Divergence @ FWHM

θװ X θ

º

-

6 X 32

8 X 34

Side Mode Suppression Ratio

SMSR

dB

-30

-

-

Polarization Extinction Ratio, 1/

PER

dB

-16

-19

-

Laser Polarization

 

 

 

TE

 

Mode Structure

 

 

Fundamental Mode

1/ Butterfly package  2/ TO-8 package

Handling Precautions

These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.

How To Order

Part number example: PH852DBR080CM. Assign optical power from those shown below.  Use a
three-digit format for all power entries. Call factory for special performance selection and certification to certain atomic absorption lines. Butterfly package is only offered at 50% of output powers shown, and is not recommended for spectroscopy applications. See Photodigm’s application note titled Optical Feedback

Package Type

(CS) Chip on Submount

(CM) ‘C’ Mount

(T8) TO-8

(BF) Butterfly

Minimum Power (mW)

        040      180

        080      240

        120      280

describe the image   describe the image C-Mount     describe the image TO-8    describe the image BF