PH808DBR Mercury™ Series High-Power Single-Frequency Laser Diode
808 nm Laser Diode in
Mercury™ TOSA Package
Technology
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
Features
- Robust, monolithic die design
- Pulsed operation for spectral stability at short pulse lengths
- Package contains TEC cooling with precise thermistor control
- High Slope Efficiency
- Hermetic package for high reliability
Description
The 808nm Mercury™ series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam in a compact hermetic package. Facets are passivated for high-power reliability. Applications include mobile spectroscopy instrumentation where durability and reliability are essential.
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
5.0 |
70 |
|
CW Laser Forward Current, T=25°C |
IF |
mA |
- |
** |
|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
TEC Current |
ITEC |
A |
-1.1 |
1.1 |
|
TEC Voltage |
VTEC |
V |
-3.0 |
3.0 |
|
Thermistor Current |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage |
VTHRM |
V |
- |
10 |
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
|
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
|
Center Wavelength @ 150mA |
λc |
nm |
805 |
807 |
809 |
|
Optical Output Power |
Po |
mW |
See Power Options Call-out |
||
|
Slope Efficiency |
ηd |
W/A |
0.6 |
0.75 |
- |
|
Threshold Current |
Ith |
mA |
- |
50 |
80 |
|
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
|
Laser Forward Voltage @ 150mA |
VF |
V |
- |
2.0 |
2.5 |
|
Thermistor Resistance @ 25°C |
RT |
KΩ |
- |
10 |
- |
|
Laser Line Width |
∆v |
MHz |
- |
1 |
10 |
|
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 28 |
8 X 32 |
|
Side Mode Suppression Ratio |
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