808 nm Laser Diode
808 nm Laser Diode, Single Frequency DBR
Technology
- DBR Single-Frequency Laser Chip
- InGaAs QW Active Layer
- Epi designed for high reliability
Features
- Available in several package styles
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
DescriptionThe PH808DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. The 808 nm laser diode is a DBR that provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Devices used in medical diagnostics, solid state laser pumping, and metrology applications. |
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
5.0 |
70 |
|
CW Laser Forward Current, T=Top |
IF |
mA |
- |
** |
|
Pulsed Laser Forward Current, T=25°C, |
IF |
A |
- |
0.5 |
|
PW=300 ns, DC=10% |
||||
|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
Photodiode Forward Current 1/2/ |
IP |
mA |
- |
5.0 |
|
Photodiode Reverse Voltage 1/2/ |
VR |
V |
- |
20.0 |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/2/ |
ID |
nA |
- |
50 |
|
TEC Current 1/2/ |
ITEC |
A |
-2.5 |
2.5 |
|
TEC Voltage 1/2/ |
VTEC |
V |
-6.0 |
6.0 |
|
Thermistor Current 1/2/ |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage 1/2/ |
VTHRM |
V |
- |
10 |
|
ESD (HBM) |
- |
V |
- |
500 |
|
External Back Reflection |
- |
dB |
- |
-14 |
|
Lead Soldering Temperature, 10 sec. Max., 1/2/ |
- |
°C |
- |
260 |
|
Fiber Pull Force 1/ |
- |
N |
- |
5.0 |
|
Fiber Bend Radius 1/ |
- |
mm |
