PH785DBR Series High-Power Single-Frequency Laser Diode
785 nm Laser Diode
Technology
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Epi designed for high reliability
Features
- Available in several package styles
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
DescriptionThe PH785DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications for the 785 nm laser diode include Raman spectroscopy and optical storage. |
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
5.0 |
70 |
|
CW Laser Forward Current, T=25°C |
IF |
mA |
- |
150** |
|
Pulsed Laser Forward Current, T=25°C, |
IF |
A |
- |
0.3 |
|
PW=300 ns, DC=10% |
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|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
Photodiode Forward Current 1/ |
IP |
mA |
- |
5.0 |
|
Photodiode Reverse Voltage 1/ |
VR |
V |
- |
20.0 |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/ |
ID |
nA |
- |
50 |
|
TEC Current 1/ |
ITEC |
A |
-2.0 |
2.0 |
|
TEC Voltage 1/ |
VTEC |
V |
-6.0 |
6.0 |
|
Thermistor Current 1/ |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage 1/ |
VTHRM |
V |
- |
10 |
|
External Back Reflection |
- |
dB |
- |
-14 |
|
Lead Soldering Temperature, 10 sec. Max. |
- |
°C |
- |
260 |
1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
|
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
|
Center Wavelength @ 150mA |
λc |
nm |
783 |
785 |
787 |
|
Optical Output Power @ 150mA |
Po |
mW |
See Power Options Call-out |
||
|
Slope Efficiency, 1/ |
ηd |
W/A |
0.3 |
0.36 |
|
|
Slope Efficiency |
ηd |
W/A |
0.6 |
0.75 |
- |
|
Threshold Current |
Ith |
mA |
- |
50 |
70 |
|
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
|
Laser Forward Voltage @ 150mA |
VF |
V |
- |
2.0 |
2.5 |
|
Thermistor Resistance @ 25°C, 2/ |
RT |
KΩ |
- |
10 |
- |
|
Photodiode Dark Current, VR=10V, LD IF=0, 2/ |
ID |
nA |
- |
- |
50 |
|
Laser Line Width @ 150mA |
∆v |
MHz |
- |
3 |
10 |
|
Polarization Extinction Ratio, 1/ |
PER |
dB |
-16 |
-19 |
- |
|
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 32 |
8 X 34 |
|
Side Mode Suppression Ratio |
SMSR |
dB |
-30 |
- |
- |
|
Laser Polarization |
|
|
|
TE |
|
|
Mode Structure |
|
|
Fundamental Mode |
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1/ Butterfly package 2/ TO-8 package
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
How To Order
Part number example: PH785DBR080CM. Assign optical power from those available shown below.
Use a three-digit format for all power entries. Call factory for special performance selection and certification to certain atomic absorption lines. Butterfly package is offered only at 50% of output powers shown, and is not recommended for spectroscopy applications. See Photodigm’s application note titled Optical Feedback
Package Type(CS) Chip on Submount (CM) ‘C’ Mount (T8) TO-8 (BF) Butterfly Minimum Power (mW) 040 120 080 180
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