Technology
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high power
without catastrophic optical damage (COD) - Epi designed for high reliability
Features
- Wavelength tunable across several lines of the O2 spectrum
around 760nm - Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
DescriptionThis monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. The 760 nm Laser Diode is designed specifically for O2 detection. |
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
10.0 |
40 |
|
CW Laser Forward Current,T=25°C |
IF |
mA |
- |
120** |
|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
Photodiode Forward Current 1/ |
IP |
mA |
- |
5.0 |
|
Photodiode Reverse Voltage 1/ |
VR |
V |
- |
20.0 |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/ |
ID |
nA |
- |
50 |
|
TEC Current 1/ |
ITEC |
A |
-2.0 |
2.0 |
|
TEC Voltage 1/ |
VTEC |
V |
-6.0 |
6.0 |
|
Thermistor Current 1/ |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage 1/ |
VTHRM |
V |
- |
10 |
|
Lead Soldering Temperature, 10 sec. Max. |
- |
°C |
- |
260 |
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
|
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
|
Center Wavelength @ 150mA |
λc |
nm |
759 |
760 |
762 |
|
Optical Output Power @ 150mA |
Po |
mW |
See Power Options Call-out |
||
|
Slope Efficiency |
ηd |
W/A |
0.6 |
0.75 |
- |
|
Threshold Current |
Ith |
mA |
- |
70 |
90 |
|
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
|
Laser Forward Voltage @ 150mA |
VF |
V |
- |
2.0 |
2.5 |
|
Thermistor Resistance @ 25°C, 2/ |
RT |
KΩ |
- |
10 |
- |
|
Photodiode Dark Current, VR=10V, |
ID |
nA |
- |
- |
50 |
|
Laser Line Width @ 150mA |
∆v |
MHz |
0.7 |
1 |
10 |
|
Polarization Extinction Ratio, 1/ |
PER |
dB |
-16 |
-19 |
- |
|
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 26 |
8 X 30 |
|
Side Mode Suppression Ratio |
SMSR |
dB |
-30 |
- |
- |
|
Laser Polarization |
|
|
|
TE |
|
|
Mode Structure |
|
|
Fundamental Mode |
||
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and
wrist strap must be used. Always store in an antistatic container with all
leads shorted together.
How To Order
Part number example: PH760DBR040CM. Assign optical power from those available. Use a
three-digit format for all power entries. Call factory for special frequency selection and certification to certain atomic absorption lines.
Package Type(CS) Chip on Submount (CM) ‘C’ Mount (T8) TO-8
|
