wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
80 mW
- 240 mW
Mounting:
Standard
Packaging:
Transmitter Optical Subassembly (TOSA) $500
PRODUCT DESCRIPTION
The 935 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 935 nm Series DBR devices are used in atomic spectroscopy for ytterbium-based (Yb) applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 8040 mW
Package Add-on description:
The Transmitter Optical Subassembly (TOSA) package comes with a thermoelectric cooler (TEC) and thermistor in a small package with a flexible ribbon cable to ready out the on-chip information. TOSAs come hermetically sealed and are great for all applications.
PRICE: $3,499.00
935 nm single-frequency DBR High Power Chip Architecture ($2999) with output power of 8040 mW, in a TOSA Package ( $500), for a total unit cost of $4250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time
NEED A HEAT SINK MOUNT?
Photodigm’s TS Mount provides easy connections between our TOSA packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.