Application Notes

Assistance in selecting and using our products.


More about the technology behind our lasers.

  • High Power DBR Lasers Operating at 1065 nm

    M. Achtenhagen, N.V. Amarasinghe and G.A. Evans, Electronics Letters, 43(14):755 (2007)

    Digital Object Identifier: 10.1049/el:20071185


    Efficient Green-Light Generation from Waveguide Crystal

    M. Achtenhagen, W.D. Bragg, J. O’Daniel and P. Young, Electronics Letters, 44(16):985 (2008)

    Digital Object Identifier: 10.1049/el:20081494


    Spectral Properties of High-Power Distributed Bragg Reflector Lasers

    Martin Achtenhagen, Nuditha Vibhavie Amarasinghe, Linglin Jiang, Jeffrey Threadgill, and Preston Young, Journal of Lightwave Technology,  27(16):3433 (2009). 

    Digital Object Identifier: 10.1109/JLT.2008.2005848 


High-Power Spectrally-Stable DBR Semiconductor Lasers Designed for Pulsing in the Nanosecond Regime

Jason K. O'Daniel, Martin Achtenhagen, Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 7616W (February 12, 2010).

Digital Object Identifier:  10.1117/12.848064


High-Power DBR Laser Diodes Grown in a Single Epitaxial Step

Linglin Jiang, Martin Achtenhagen, Nuditya Vibhavie Amarasinghe, Preston Young, and Gary Evans, 

Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301F (February 03, 2009);

Digital Object Identifier :10.1117/12.807872

  • Miscellaneous