Characteristics of Fundamental Mode Laser Diodes

Characteristics of Fundamental Mode Laser Diodes

High Power DBR Lasers Operating at 1065 nm

M. Achtenhagen, N.V. Amarasinghe and G.A. Evans, Electronics Letters, 43(14):755 (2007)

Digital Object Identifier: 10.1049/el:20071185

 

High-Power DBR Laser Diodes Grown in a Single Epitaxial Step

Linglin Jiang, Martin Achtenhagen, Nuditya Vibhavie Amarasinghe, Preston Young, and Gary Evans, 

Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301F (February 03, 2009);

Digital Object Identifier :10.1117/12.807872

 

Spectral Properties of High-Power Distributed Bragg Reflector Lasers

Martin Achtenhagen, Nuditha Vibhavie Amarasinghe, Linglin Jiang, Jeffrey Threadgill, and Preston Young, Journal of Lightwave Technology, 27(16):3433 (2009). 

Digital Object Identifier: 10.1109/JLT.2008.2005848 

 

Applications of Photodigm Single Frequency Laser Diodes

Efficient Green-Light Generation from Waveguide Crystal

M. Achtenhagen, W.D. Bragg, J. O’Daniel and P. Young, Electronics Letters, 44(16):985 (2008)

Digital Object Identifier: 10.1049/el:20081494

 

High-Power Spectrally-Stable DBR Semiconductor Lasers Designed for Pulsing in the Nanosecond Regime

Jason K. O'Daniel, Martin Achtenhagen, Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 7616W (February 12, 2010).

 Digital Object Identifier:  10.1117/12.848064