Photodigm DBR Laser Diodes ranging 730-1100 nm

(972) 235-7584




DBR Laser Diode

Chip Architecture:

Low Power $2,750


15 mW

- 80 mW




Butterfly + Isolator +$3,000


The 1036 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1036 nm Series DBR devices are used in frequency doubling applications as a low-noise optical pump source.

Chip Architecture Description

This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 15-80 mW

Package Add-on description:

The Butterfly + Isolator package is the ideal package for the customer that needs fiber-coupling with excellent isolation for precision spectroscopy work. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses and isolator absorption losses.

PRICE: $5,750

1036 nm single-frequency DBR Low Power Chip Architecture ($2750) with output power of 15-80 mW, in a Butterfly-ISO Package (+$3000), for a total unit cost of $5750


Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!

Contact us for: 1036DBRL-BFISO