Photodigm DBR Laser Diodes ranging 730-1100 nm

(972) 235-7584



DBR Laser Diode

Chip Architecture:

Low Power $2,750


40 mW

- 180 mW




9MM $150


The 1036 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1036 nm Series DBR devices are used in frequency doubling applications as a low-noise optical pump source.

Chip Architecture Description

This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-180 mW

Package Add-on description:

9MM is the ideal package for simple integration of a low-power part that is also hermetically sealed; shielding it from ambient conditions. Features 3 terminals with an optional photodiode.

PRICE: $2,900.00

1036 nm single-frequency DBR Low Power Chip Architecture ($2750) with output power of 40-180 mW, in a 9mm Package ( $150), for a total unit cost of $2900


Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!

Contact us for: 1036DBRL-9M